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SPDC Terms beginning with G
Terms and definitions extracted from current SPDC published documents
- gapless
-
Not possessing gaps, series, or parallel as in gapless arrester.
[C62.11-2005] - gas-tube surge arrester (gas-tube surge-protective device component)
-
A gap, or gaps, in an enclosed discharge medium, other than air at atmospheric pressure, designed to protect apparatus or personnel, or both, from high transient voltages.
[C62.31-2006] - gate
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An electrode connected to one of the semiconductor regions to introduce a control current.
[62.37-1996] - gate reverse current, adjacent terminal open
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IGAO; IGKO
The current through the gate terminal when a specified gate bias voltage, VG, is applied and the cathode terminal for a p-gate device or anode terminal for an n-gate device is open circuited.
[62.37-1996] - gate reverse current, forward conducting state
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IGAF;IGKF
The current through the gate terminal when a specified gate bias voltage, VG, is applied and a specified forward conduction current, IF, is flowing.
[62.37-1996] - gate reverse current, main terminals short-circuited
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IGAS;IGKS
The current through the gate terminal when a specified gate bias voltage, VG, is applied and the cathode terminal for a p-gate device or anode terminal for an n-gate device is short circuited to the third terminal.
[62.37-1996] - gate reverse current, on-state
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IGAT;IGKT
The current through the gate terminal when a specified gate bias voltage, VG, is applied and a specified on-state current, IT, is flowing.
[62.37-1996] - gate switching charge
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QGS
The charge through the gate terminal, under impulse conditions, during the transition from the off-state to the switching point, when a specified gate bias voltage, VG, is applied.
[62.37-1996] - gate-to-adjacent terminal breakover voltage
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VGK(BO); VGA(BO)
The gate to cathode voltage for a p-type device or gate to anode voltage for an n-gate device at the breakover point. This is equivalent to the voltage difference between the breakover voltage, V(BO), and the specified gate voltage, VG.
[62.37-1996] - gate-to-adjacent terminal peak off-state voltage
-
VGDM
The maximum gate to cathode voltage for a p-gate device or gate to anode voltage for an n-gate device that may be applied such that a specified off-state current, ID, at a rated off-state voltage, VD, is not exceeded.
[62.37-1996] - glow current
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The current that flows after breakdown when circuit impedance limits the current to a value less than the glow-to-arc transition current. Syn:glow mode current.
[C62.31-2006] - glow voltage
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The voltage drop across the gas tube during glow-current flow. It is sometimes called the glow mode voltage.
[C62.31-2006] - glow-to-arc transition current
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The current required for the gas tube to pass from the glow mode into the arc mode.
[C62.31-2006] - grading or control ring
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A metal part, usually circular or oval in shape, mounted to modify electrostatically the voltage gradient or distribution.
[C62.11-2005] - ground insulation (rotating electric machinery)
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Insulation used to insure the electric isolation of the windings from the core and mechanical parts of a machine. It separates the turn insulation from the surrounding slot steel. Ground insulation is sometimes referred to as coil insulation, or groundwall insulation.
[C62.21-2003] - ground potential rise (GPR)
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The voltage that a station grounding grid may attain relative to a distant grounding point assumed to be at the potential of remote earth.
[C62.23-1995] - ground terminal
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The conducting part provided for connecting the arrester to ground.
[C62.11-2005] - ground-fault factor
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The ratio of the highest power frequency voltage on an unfaulted phase during a line-to-ground fault to the phase-to-ground power-frequency voltage without the fault.
NOTE 1 — The ground-fault factor generally will be less than 1.3, if the zero-sequence reactance is less than three times the positive-sequence reactance, and the zero-sequence resistance does not exceed the positive-sequence reactance.
NOTE 2 — IEEE Std C62.1-1989 defines a ?coefficient of grounding.? This coefficient can be obtained by dividing the ground-fault factor by root 3.
[C62.82.1-2010]